个人简介
Education
Ph.D. Electrical Engineering and Computer Sciences, University of California, Berkeley, USA, 2013
M.Phil. Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong , 2007
B.S. Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong , 2004
Positions
2016 – present Assistant Professor, Institute of Applied Physics and Materials Engineering, University of Macau
2014 – 2015 Principal Engineer, Taiwan Semiconductor Manufacturing Company, Taiwan.
Teaching
Ph.D. Courses
APME 8022 Transmission Electron Microscopy
APME 8003 Advanced Instruments for Materials Characterization
Undergraduate Courses
GEST 1017 Mysteries of the Universe
GEST 1015 Physics and Modern Society
研究领域
Monolithic Integration of optoelectronics (e.g. Laser, detectors) with Silicon based technology
Exploration of novel materials synthesized with low-cost solution-based processes for high-efficiency optoelectronic applications
Advanced materials characterization with electron microscopy
近期论文
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1.Han, Z. Yan, W. K. Ng, Y. Xue, K. W. Ng, K. S. Wong, K. M. Lau “III–V micro- and nano-lasers deposited on amorphous SiO2” Applied Physics Letters 116 (17), 172102 (2020).
2.J. Y. Dong, W. Y. Ji, S. P. Wang, Q. L. Yuan, Y. C. Kong, S. C. Su, K. W. Ng, Z. K. Tang “Solvent Effects on the Interface and Film Integrity of Solution-Processed ZnO Electron Transfer Layers for Quantum Dot Light Emitting Diodes” ACS Applied Electronic Materials 2 (4), 1074-1080 (2020).
3.Y. Y. Zhao, S. N. Qu, X. Y. Feng, J. C. Xu, Y. Yang, S. C. Su, S. P. Wang, K. W. Ng “Tailoring the Photoluminescence Excitation Dependence of the Carbon Dots via an Alkali Treatment” The journal of physical chemistry letters 10 (16), 4596-4602 (2019).
4.Han, Q. Li, K. W. Ng, S. Zhu, K. M. Lau “InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands” Nanotechnology 29 (22), 225601 (2018).
5.Lu, I. Bhattacharya, H. Sun, T. T. D. Tran, K. W. Ng, G. Silveira, C. J. Chang-Hasnain “Nanopillar quantum well lasers directly grown on silicon and emitting at silicon-transparent wavelengths” Optica 4 (7), 717-723 (2017).
6.K Li*, K. W. Ng*, T. T. D. Tran, H. Sun, F. Lu, C. J. Chang-Hasnain “Wurtzite-phased InP micropillars grown on silicon with low surface recombination velocity,” Nano Letters 15 (11), 7189-7198 (2015) (Authors with * are co-first authors).
7.Q. Li, K. W. Ng, K. M. Lau “Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon,” Appl. Phys. Lett. 106 (7), 072105 (2015).
8.Chen, T. T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, C Chang-Hasnain, “Nanolasers grown on silicon” Nature Photonics 5 (3), 170-175 (2011).