任泽阳 - 西安电子科技大学

个人简介

个人简介任泽阳，1991年8月生，山东枣庄人，于2014年获得西安电子科技大学学士学位，同年保送为西安电子科技大学直博研究生，师从郝跃院士，于2018年提前毕业获得微电子学与固体电子学博士学位，并在西安电子科技大学继续做博士后研究工作。主要研究关注于金刚石材料生长及器件研究，以及金刚石和氮化镓异质集成研究。在APL,IEEEEDL,JMCC,IEEEJEDS等期刊上发表SCI检索论文20余篇，其中第一及通讯作者10余篇。申请专利10余项，其中授权3项。获批2019年博士后创新人才支持计划，主持装发预研重点实验室基金项目两项，博士后科学基金面上项目等科研项目。并参与预研项目、国家重点研发计划，以及自然基金面上项目等多个项目的研究工作。科学研究目前研究团队承担的科研项目：获批2019年博士后创新人才支持计划主持重点实验室基金2项。第66批博士后科学基金面上项目。参与预研项目、国家重点研发计划，以及自然基金面上项目等多个项目的研究工作。科研团队团队教师张金风，任泽阳，张苇杭博士研究生苏凯，何琦硕士研究生刘俊，徐佳敏，吕丹丹，杨士奇，邢宇菲，梁振芳

研究领域

1．金刚石材料生长及器件研究 2.金刚石-氮化镓异质集成研究

近期论文

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ZeyangRen,DandanLv,JiaminXu,JinfengZhang*,JinchengZhang*,KaiSu,ChunfuZhangandYueHao.HighTemperature(300℃)ALDGrownAl2O3onHydrogenTerminatedDiamond:BandOffsetandElectricalPropertiesoftheMOSFETs[J].AppliedPhysicsLetters,2020,116(1). Ze-YangRen,JunLiu,KaiSu,Jin-FengZhang†,Jin-ChengZhang,Sheng-RuiXu,andYueHao.MultipleenlargedgrowthofsinglecrystaldiamondbyMPCVDwithPCD-rimlesstopsurface[J].Chin.Phys.B.Vol.28,No.12(2019)128103. ZhichengSu,†ZeyangRen,YitianBao,XiangzhouLao,JinfengZhang,JinchengZhang,DeliangZhu,YoumingLu,YueHaoandShijieXu.Luminescencelandscapesofnitrogen-vacancycentersindiamond:quasi-localizedvibrationalresonancesandselectivecoupling[J].J.Mater.Chem.C,2019,7,8086. ZeyangRen,WanjiaoChen,JinfengZhang,JinchengZhang,ChunfuZhang,GuanshengYuan,KaiSu,ZhiyuLinandYueHao,Highperformancesinglecrystallinediamondnormally-offfieldeffecttransistors[J].IEEEJournaloftheElectronDevicesSociety.2019,7(1):82-87.(SCI:000460753000015) 张金风;徐佳敏;任泽阳*;何琦;许晟瑞;张春福;张进成;郝跃。不同晶面的氢终端单晶金刚石场效应晶体管特性研究。物理学报，2020年第2期。 Jin-FengZhang,*Wan-JiaoChen,Ze-YangRen,*KaiSu,Peng-ZhiYang,Zhuang-ZhuangHu,Jin-ChengZhang,andYueHao.Characterizationandmobilityanalysisofnormally-offhydrogen-terminateddiamondmetal-oxide-semiconductorfieldeffecttransistors[J].PhysicaStatusSolidi(a).NOV2019.(SCI:000497222700001). ZeyangRen,JinfengZhang,JinchengZhang,ChunfuZhang,ShengruiXu,YaoLi,andYueHao.DiamondFieldEffectTransistorsWithMoO3GateDielectric[J].IEEEElectronDeviceLetters,2017,38(6):786-789.(SCI:000402146300023) ZeyangRen,JinfengZhang,JinchengZhang,ChunfuZhang,DazhengChen,PengzhiYang,YaoLi,andYueHao.PolycrystallineDiamondMOSFETWithMoO3GateDielectricandPassivationLayer[J].IEEEElectronDeviceLetters,2017,38(9):1302-1304.(SCI:000408355200029) ZeyangRen,JinfengZhang,JinchengZhang,ChunfuZhang,DazhengChen,RudaiQuan,JiayinYang,ZhiyuLin,andYueHao.PolycrystallinediamondRFMOSFETwithMoO3gatedielectric[J].AIPAdvances,2017,7(12):125302.(SCI:000418492500075) ZeyangRen,GuanshengYuan,JinfengZhang,LeiXu,JinchengZhang,WanjiaoChen,andYueHao.Hydrogen-terminatedpolycrystallinediamondMOSFETswithAl2O3passivationlayersgrownbyatomiclayerdepositionatdifferenttemperatures[J].AIPAdvances,2018,8(7):065026.(SCI检索) ZeyangRen,JinfengZhang,JinchengZhang,ShengruiXu,ChunfuZhang,YaoLi,andYueHao.GrowthandCharacterizationoftheLaterallyEnlargedSingleCrystalDiamondGrownbyMicrowavePlasmaChemicalVaporDeposition[J].ChinesePhysicsLetters,2018,35(7):078101.(SCI检索) ZeyangRen,JinfengZhang,JinchengZhang,ShengruiXu,ChunfuZhang,RudaiQuan,andYueHao.CharacteristicsofH-terminatedsinglecrystallinediamondfieldeffecttransistors[J].ActaPhysicaSinica.2017,66(20):208101.(SCI:000417417200027) ZeyangRen,JinfengZhang,JinchengZhang,ChunfuZhang,PengzhiYang,DazhengChen,YaoLi,andYueHao.ResearchonthehydrogenterminatedsinglecrystaldiamondMOSFETwithMoO3dielectricandgoldgatemetal[J].JournalofSemiconductors,2018,39(7):074003.(DOI:10.1088/1674-4926/39/7/074003) JinfengZhang,ZeyangRen,JinchengZhang,ChunfuZhang,DazhengChen,ShengruiXu,YaoLi,andYueHao.CharacterizationandmobilityanalysisofMoO3-gateddiamondMOSFET[J].JapaneseJournalofAppliedPhysics,2018,56,100301(2017).(SCI:000409082000001) JinfengZhang,PengzhiYang,ZeyangRen,JinchengZhang,ShengruiXu,ChunfuZhang,LeiXuandYueHao.Characterizationofhigh-transconductancelong-channelhydrogen-terminatedpolycrystaldiamondfieldeffecttransistor[J].ActaPhysicaSinica.2018,67(6):068101.(SCI:000428115000028) YaoLi,JinfengZhang,GuipengLiu,ZeyangRen,JinchengZhang,andYueHao.MobilityofTwo-DimensionalHoleGasinH-TerminatedDiamond[J].2018,12(3):1700401.(SCI:000426745100007)