许静 - 中国科学院微电子研究所 -

个人简介

教育背景 2006.09-2011.07中科院电子所物理电子学专业工学博士 2002.09-2006.07西南交通大学电子科学与技术专业学士工作简历 2018.03-中科院微电子所先导中心副研究员 2011.07-2018.03中科院微电子所先导中心助理研究员

研究领域

集成电路工艺与器件，金属硅化物及接触技术，MRAM集成技术

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

1.XueLuo,GuileiWang,JingXu*,NingyuanDuan,ShujuanMao,ShiLiu,JunfengLi,WenwuWang,DapengChen,ChaoZhao,TianchunYeandJunLuo:ImpactofGepre-amorphizationimplantationonformingultrathinTiGexonbothn-andp-Gesubstrate.JapaneseJournalofAppliedPhysics，2018,57（7S） 2.NingyuanDuan,GuileiWang,JingXu*,ShujuanMao,XueLuo,ZhaozhaoHou,WenwuWang,DapengChen,JunfengLi,ShiLiu,ChaoZhao,TianchunYeandJunLuo:EnhancingthethermalstabilityofNiGebyprior-germanidationfluorineimplantationintoGesubstrate.JapaneseJournalofAppliedPhysics，2018,57（7S） 3.ZhaoyunTang,JingXu,HongYang,HushanCui,BoTang,YefengXu,HongliWang,JunfengLi,andJiangYan:ImpactofTaNasWetEtchStopLayeronDeviceCharacteristicsforDual-MetalHKMGLastIntegrationCMOSFETs.IEEEElectronDeviceLetters,2013,34(12):1488-1490 4.HushanCui,JingXu,JianfengGao,JinjuanXiang,YihongLu,ZhaoyunTang,XiaobinHe,TingtingLi,JunLuo,XiaoleiWang,BoTang,JiahanYu,TaoYang,JiangYan,JunfengLi,ChaoZhao:EvaluationofTaNastheWetEtchStopLayerduringthe22nmHKMGGateLastCMOSIntegrations.EcsTransactions,2013,58(6):111-118 5.Shu-JuanMao,JingXu,Gui-LeiWang,JunLuo,Ning-YuanDuan,EddySimoen,HenryRadamson,Wen-WuWang,Da-PengChen,Jun-FengLi,ChaoZhaoandTian-ChunYe:OnthemanifestationofGePre-amorphizationImplantation(PAI)informingultrathinTiSixforTidirectcontactonSiinsub-16/14nmComplementaryMetal-Oxide-Semiconductor(CMOS)technologynodes.ECSJ.SolidStateSci.Technol.2017,6(9):660-664 6.HushanCui,JunLuo,JingXu,JianfengGao,JingjuanXiang,ZhaoyunTang,etal.:Investigationoftanasthewetetchstoplayerforhkmg-lastintegrationinthe22nmandbeyondnodescmostechnology.Vacuum,2015,119,185-188 7.MinTian,Huicaizhong,JingXu,LiLi,JunLuo,ZhigangWang:RoleofTielectrodeontheelectricalcharacterizationoffilamentwithinAl2O3basedantifuse.ECSJournalofSolidStateScienceandTechnology,2018,7（4） 8.Tang,Z.,Tang,B.,Xu,J.,Xu,Y.,Wang,H.,&Li,J.,etal.(2014):IntegrationofAdvancedMOSFETDevicewithDualEffectiveBandEdgeWorkFunctionMetalsUsingbothHKandMGLastScheme.ECSMeeting,61:253-259