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1、K.Zhan,X.J.Zheng*,J.F.Peng,Y.K.Zhu,H.B.Cheng.Effectsofpotassiumcontentontheelectricalandmechanicalpropertiesof(Na1-xKx)0.5Bi0.5TiO3thinfilms.Cerm.Inter.4(2015)，3474-3480(SCI源刊,影响因子2.086)
2、M.J.Yuan,Y.Zhang,X.J.Zheng,B.Jiang,P.W.Li,S.F.Deng.HumiditysensingpropertiesofK0.5Na0.5NbO3powdersynthesizedbymetalorganicdecomposition.SensorsandActuatorsB，209(2015)252-257(SCI源刊,影响因子3.84)
3、R.Wang,D.Wang,Y.Zhang,X.J.Zheng*.HumiditysensingpropertiesofBi0.5(Na0.85K0.15)0.5Ti0.97Zr0.03O3microspheres:EffectofAandBsitesco-substitution.SensorsandActuatorsB,190(2014)，305-310(SCI源刊,影响因子3.122)
4、J.F.Peng,X.JZheng*,Z.H.Dai.DielectricenhancementofthetrilayeredBi3.15Eu0.85Ti3O12/Bi3.15Nd0.85Ti3O12/Bi3.15Eu0.85Ti3O12thinfilmdepositedonPt/Ti/SiO2/Sisubstrate.JMaterSci:MaterElectron25(2014),414-418.(SCI源刊,影响因子1.486)
5、J.F.Peng,X.J.Zheng*,Y.O.Gong,K.Zhan,Z.H.Dai.EffectsofAnnealingTemperatureontheElectricPropertiesof0.94(Na0.5Bi0.5)TiO3-0.06BaTiO3FerroelectricThinFilm.J.Electron.Mater.43(2014),724-731.(SCI源刊,影响因子1.635)
6、X.J.Zheng*,Y.K.Zhu,X.Liu,J.Liu,Y.Zhang,J.G.Chen.EvaluationofElectromechanicalCouplingParametersofPiezoelectricMaterialsbyUsingPiezoelectricCantileverWithCoplanarElectrodeStructureinQuasi-Stasis.IEEET.Ultrason.Ferr.,61(2014)，369-375.(SCI源刊,影响因子1.822)
7、X.J.Luo,X.J.Zheng*,D.Wang,Y.Zhang,H.B.Cheng,X.Y.Wang,H.J.Zhuang,Y.L.Lou,Theethanol-sensingpropertiesofporousGaNnanofiberssynthesizedbyelectrospinning.SensorsandActuatorsB:Chemical.,202(2014)，1010-1018.(SCI源刊,影响因子3.122)
8、X.J.Zheng*,Z.XZhang,Y.K.Zhu,AnalysisofEnergyHarvestingPerformanceford15ModePiezoelectricBimorphinSeriesConnectionBasedonTimoshenkoBeamModel.IEEE/ASMETran.Mech.99(2014)，1-12.(SCI源刊,影响因子3.14)
9、K.Zhan,X.J.Zheng,H.Han,Q.Feng,C.H.Jiang.investigationofcyclicsofteningbehaviorofshotpeenedS30432austeniticstainlesssteelbyx-raydiffractionmethod.Surf.Rev.Lett.6(2014)，71-76(SCI源刊,影响因子0.567)
10、D.Wang,W.Q.Niu,M.H.Tan,M.B.Wu,X.J.Zheng,Y.P.Li,N.Tiubaki.PtNanocatalystsSupportedonReducedGrapheneOxideforSelectiveConversionofCelluloseorCellobiosetoSorbitol.Chemsuschem.5(2014)，1398-1406.(SCI源刊,影响因子7.117)
11、Z.Zhu,X.J.Zheng*,D.S.Zhang,J.Gao.Thresholdstressof90°domainswitchinginthemisfitstrain–externalstressphasediagram.Jap.J.Appl.Phys.53(2014)，495-501.(SCI源刊,影响因子1.057)
12、Y.C.She,X.J.Zheng,D.L.Wang.Enhancementoffour-wavemixingprocessinafour-leveldoublesemiconductorquantumwell.Chin.Phys.B.12(2014)，194-202.(SCI源刊,影响因子1.392)
13、X.J.Zheng,J.Y.Liu,J.F.Peng,X.Liu,Y.Q.Gong,K.S.Zhou,D.H.Huang.EffectofpotassiumcontentonelectrostrictivepropertiesofNa0.5Bi0.5TiO3-basedrelaxorferroelectricthin?lmswithmorphotropicphaseboundary.ThinSolidFilms,548(2013),118-124.(SCI源刊,影响因子1.884)
14、Y.J.Zhang,X.J.Zheng,F.Jiao,H.P.Hu.Theeffectofstrainanddeadlayeronthenonlinearelectric-mechanicalbehaviorofferroelectricthin?lms.ComputationalMaterialsScience77(2013),377-383(SCI源刊,影响因子1.522)
15、Y.W.Tao,X.J.Zheng,W.Liu,S.T.Song,H.Zheng.DeterminationofthemechanicalconstantsofZnSnanobeltbycombiningnanoindentationtestandfiniteelementmethod.InternationalJournalofSolidsandStructures,50(2013),487-497.(SCI源刊，影响因子2.076)(力学类1区)
16、Z.Zhu,X.J.Zheng,Z.C.Yang.NanoscaledomainswitchingsofBi3.15Dy0.85Ti3O12thinfilmunderthesimultaneousapplicationofpolarizingvoltageandloadingforce.J.Appl.Phys.113(2013),104-110.(SCI源刊,影响因子2.497)
17、X.J.Luo,Z.Lou,L.L.Wang,X.J.Zheng,*andTongZhang.Fabricationofflower-likeZnOnanosheetandnanorod-assembledhierarchicalstructuresandtheirenhancedperformanceingassensors.NewJ.Chem.,37(2013),3607-3611(SCI源刊,影响因子2.966)
18、L.LWang,X.J.Luo,X.J.Zheng*,R.WangandT.Zhang.Directannealingofelectrospunsynthesizedhigh-performanceporousSnO2hollownanofibersforgassensors,RSCAdv.3(2013),9723-9728(SCI源刊,影响因子2.562)
19、YanchaoShe,XuejunZheng,DenglongWang,andWeixiZhang.Controllabledoubletunnelinginducedtransparencyandsolitonsformationinaquantumdotmolecule.OpticsExpress21(2013),17392-17403.(SCI源刊,影响因子3.546)
20、Y.Wei,H.B.Cheng,X.Y.Wang,andX.J.Zheng.EvaluationonresidualstressinBi3.15(Eu0.7Nd0.15)Ti3O12polycrystallineferroelectricthinfilmbyusingtheorientationaveragemethod.AppliedPhysicsLetters,101,901-909(2012).(SCI源刊,影响因子3.82)
21、Y.Wei,L.H.Xu,Y.W.Tao,X.J.Zheng,J.H.Yang,D.F.Zou,andS.X.Mao.Width-to-thicknessratiodependenceonphotoplasticeffectofZnSnanobelt.AppliedPhysicsLetters,101,901-904(2012).(SCI源刊,影响因子3.82)
22、L.H.Xu,D.D.Jiang,andX.J.Zheng.Effectofgrainorientationinx-raydiffractionpatternonresidualstressinpolycrystallineferroelectricthinfilm.JournalofAppliedPhysics112,513-521(2012).(SCI源刊,影响因子2.497)
23、X.Liu,X.J.Zheng,J.Y.Liu,K.S.Zhou,D.H.Huang.Effectofannealingtemperatureontheelectrostrictivepropertiesof0.94(Na0.5Bi0.5)TiO3-0.06BaTiO3thinfilms.JournalofElectroceramics,29(3)(2012),270-276.(SCI源刊，影响因子1.194)
24、S.T.Song,X.J.Zheng,H.Zheng,W.Liu.Evaluationofengineering/piezoelectricconstantsofpiezoelectricthinfilmbycombiningnanoindentationtestwithFEM.ComputationalMaterialsScience,63(2012),134-144.(SCI源刊，影响因子1.522)
25、Y.Zhang,X.J.Zheng,X.L.ZhongandS.F.Deng.TheethanolsensingcharacteristicsofZnOthinfilmswithlowoperatingtemperaturessynthesizedbypulsedlaserdeposition.MeasurementScienceandTechnology,23(2012),105-107.(SCI源刊，影响因子1.352)
26、S.T.Peng,X.J.Zheng,J.Sun,Y.Zhang,L.Zhou,J.H.Zhao,S.F.Deng,M.F.Cao,W.Xiong,K.Peng.Modelingofamicro-cantileveredpiezo-actuatorconsideringthebufferlayerandelectrodes.J.Micromech.Microeng.22(2012),065-075.(SCI源刊，影响因子2.105)
27、J.H.Zhao,X.J.Zheng,L.Zhou,Y.Zhang,J.Sun,W.J.Dong,S.H.Deng,S.T.Peng.Investigationofad15modePZT-51piezoelectricenergyharvesterwithaseriesconnectionstructure.SmartMater.Struct.21(2012),105-109.(SCI源刊，影响因子2.089).
28、Y.Q.Gong,H.Dong,X.J.Zheng,J.F.Peng,X.J.Li,R.J.Huang.LargepiezoelectricresponseofBi0.5(Na(1?x)Kx)0.5TiO3thinfilmsnearmorphotropicphaseboundaryidentifiedbymulti-peakfitting.J.Phys.D:Appl.Phys.45(2012),301-305.(SCI源刊,影响因子2.544)
29、L.Zhou,J.Sun,X.J.Zheng,S.F.Deng,J.H.Zhao,S.T.Peng.Y.Zhang,X.Y.WangandH.B.Cheng.Amodelfortheenergyharvestingperformanceofshearmodepiezoelectriccantilever,SensorsandActuatorsA.179(2012),185-192.(SCI源刊,影响因子1.802)
30、J.Sun,X.J.Zheng,W.Li,Amodelfortheelectricalcharacteristicsofmetal-ferroelectric-insulator-semiconductorfield-effecttransistor.CurrentAppliedPhysics,12(2012),760-764.
31、Y.Zhang,X.J.Zheng,X.L.Zhong,S.F.Deng.TheethanolsensingcharacteristicsofZnOthinfilmswithlowoperatingtemperaturessynthesizedbypulsedlaserdeposition.Meas.Sci.Technol.23(2011),105-107.
32、X.J.Zheng,X.C.Cao,J.Sun,B.Yuan,Q.H.Li,Z.Zhu,Y.Zhang,AvacuumpressuresensorbasedonZnOnanobeltfilm,Nanotechnology,22(2011),495-501(1-6).
33、Y.Zhang,X.J.Zheng,T.Zhang,CharacterizationandhumiditysensingpropertiesofBi0.5Na0.5TiO3-Bi0.5K0.5TiO3powdersynthesizedbymetal-organicdecomposition,SensorsandActuatorsB:Chemical,156(2011),887-892.
34、J.Sun,X.J.Zheng,J.Cao,W.Li,Interfaceeffectsonthecharacteristicsofmetal-ferroelectric-insulator-semiconductor?eld-effecttransistor,Semicond.Sci.Technol.,26(2011),093-097(1-6).
35、J.Sun,X.J.Zheng,ModelingofMFIS-FETsfortheapplicationofferroelectricrandomaccessmemory.IEEETransactionsonElectronDevices,58(2011)55-59.
36、Z.Zhu,X.J.Zheng,D.D.Jiang,Z.C.Yang,Thethresholdelectricfieldof180°domainswitchinginthemisfitstrain-externalelectricfieldphasediagram.J.Appl.Phys,110(2011),032-035.
37、H.Dong,X.J.Zheng,W.Li,Y.Q.Gong,J.F.Peng,Z.Zhu,Thedielectricrelaxationbehaviorof(Na0.82K0.18)0.5Bi0.5TiO3ferroelectricthinfilm.J.Appl.Phys.,110(2011),119-124.
38、H.Zheng,X.J.Zheng,S.T.Song,J.Sun,F.Jiao,W.Liu,G.Y.Wang,Evaluationoftheelasticmodulusofthinfilmconsideringthesubstrateeffectandgeometryeffectofindentertip.ComputationalMaterialsScience,50(2011),26-30.
39、Y.Zhang,X.J.Zheng,T.Zhang,J.Sun,Y.Bian,J.Song,Gassensingpropertiesofcoral-likeBi0.5K0.5TiO3powderssynthesizedbymetal-organicdecomposition.Meas.Sci.Technol.22(2011),195-205.
40、J.Sun,X.J.Zheng,W.Yin,M.H.Tang,W.Li,Influencesofspacechargeandelectrodeontheelectricaltransportthrough(Ba,Sr)TiO3thinfilmcapacitors.AppliedSurfaceScience,257(2011),4990-4993.
41、B.Yuan,X.J.Zheng,Y.Q.Chen,B.Yang,T.Zhang,HighphotosensitivityandlowdarkcurrentofphotoconductivesemiconductorswitchbasedonZnOsinglenanobelt,Solid-StateElectronics,55(2011),49-53.
42、Y.Q.Chen,Y.F.En,Y.Huang,X.D.Kong,X.J.Zheng,andY.D.Lu,Effectsofsurfacetensionandaxisstressonpiezoelectricbehaviorsofferroelectricnanowires.AppliedPhysicsLetters,99,(2011),203106-203108(SCI源刊，影响因子3.726)
43、Y.Q.Chen,Y.F.En,Y.Huang,X.D.Kong,W.X.Fang,andX.J.Zheng,EffectsofStressandDepolarizationonElectricalBehaviorsofFerroelectricField-EffectTransistor.IEEEELECTRONDEVICELETTERS,99,(2011),1-3(SCI源刊，影响因子2.714)
44、H.Zheng,X.J.Zheng,J.S.Wang,G.C.Yu,Y.Li,S.T.Song,C.Han,EvaluationtheeffectofaspectratioforYoung’smodulusofnanobeltusingfiniteelementmethod.Materialsanddesign,32,(2011),1407-1413(SCI源刊，影响因子1.518)
45、J.Sun,X.J.Zheng,W.Yin,M.H.Tang,W.Li,Space-charge-limitedleakagecurrentinhighdielectricconstantandferroelectricthinfilmsconsideringthefield-dependentpermittivity.Appl.Phys.Lett.,97.24(2010):242905(SCI源刊，影响因子3.726)
46、H.Zheng,X.J.Zheng,J.S.Wang,G.C.Yu,Y.Li,S.T.Song,C.Han,EvaluationtheeffectofaspectratioforYoung’smodulusofnanobeltusingfiniteelementmethod.Materialsanddesign,32.3(2011):1407-1413(SCI源刊，影响因子1.518)
47、B.Yuan,X.J.Zheng,Y.Q.Chen,B.Yang,T.Zhang,HighphotosensitivityandlowdarkcurrentofphotoconductivesemiconductorswitchbasedonZnOsinglenanobelt.Solid-StateElectronics,55,(2011),49-53.(SCI源刊，影响因子1.422)
48、Y.Q.Chen,X.J.Zheng,W.Li,Modelingofflexoelectriceffectoncapacitor-voltageandmemorywindowofmetal-ferroelectric-insulator-siliconcapacitor.Appl.Phys.Lett.,96,(2010),233501(1-3)(SCI源刊，影响因子3.726)
49、X.J.Zheng,G.CYu,Y.Q.Chen,S.X.Mao,T.Zhang,PhotoinducedstiffeningandphotoplasticeffectofZnSindividualnanobeltinnanoindentation.J.Appl.Phys.,108,(2010),094305.(SCI源刊,影响因子2.497)
50、X.J.Zheng,Q.Y.Wu,J.F.Peng,L.He,X.Feng,Y.Q.Chen,D.Z.Zhang,AnnealingtemperaturedependenceofeffectivepiezoelectriccoefficientsforBi3.15Eu0.85Ti3O12thinfilms.J.Mater.Sci.,45,(2010),3001-3006.(SCI源刊,影响因子1.181)
51、X.J.Zheng,J.F.Peng,Y.Q.Chen,L.He,X.Feng,D.Z.Zhang,L.J.Gong,Q.Y.Wu,EnhancementoneffectivepiezoelectriccoefficientofBi3.25Eu0.75Ti3O12ferroelectricthinfilmsundermoderateannealingtemperature.ThinSolidFilms,519,(2010),714-718.(SCI源刊,影响因子1.884)
52、D.Z.Zhang,X.J.Zheng,X.Feng,T.Zhang,J.Sun,S.H.Dai,L.J.Gong,Y.Q.Gong,L.He,Z.Zhu,J.Huang,X.Xu,Ferro-piezoelectricpropertiesof0.94(Na0.5Bi0.5)TiO3–0.06BaTiO3thinfilmpreparedbymetal–organicdecomposition.JournalofAlloysandCompounds,504,(2010),129-133.(SCI源刊，影响因子2.135)
53、J.S.Wang,X.J.Zheng,H.Zheng,S.T.Song,Z.Zhu,IdentificationofelasticparametersoftransverselyisotropicthinfilmsbycombiningnanoindentationandFEManalysis.ComputationalMaterialsScience,49,(2010),378-385.(SCI源刊，影响因子1.522)
54、Y.Q.Chen,X.J.Zheng,W.Li,Sizeeffectofmechanicalbehaviorforlead-free(Na0.82K0.18)0.5Bi0.5TiO3nanofibersbynanoindentation.MaterialsScienceandEngineeringA,527.21(2010):5462-5466.(SCI源刊，影响因子1.806)
55、Y.Q.Chen,X.J.Zheng,X.Feng,Thefabricationofvanadium-dopedZnOpiezoelectricnanofiberbyelectrospinning.Nanotechnology,21,(2010),055708.(SCI源刊,影响因子3.446)
56、X.J.Zheng,Y.Q.Chen,T.Zhang,B.Yang,C.B.Jiang,B.Yuan,Z.Zhu,PhotoconductivesemiconductorswitchbasedonZnSnanobeltsfilm.SensorsandActuatorsB.,147,(2010),442-446(SCI源刊,影响因子3.122)
57、Y.Zhang,X.J.Zheng,T.Zhang,L.J.Gong,S.H.Dai,Y.Q.Chen,HumiditysensingpropertiesofthesensorbasedonBi0.5K0.5TiO3powder.SensorsandActuatorsB.,147,(2010),180-184(SCI源刊,影响因子3.122)
58、X.J.Zheng,Y.Q.Chen,T.Zhang,C.B.Jiang,B.Yang,B.Yuan,S.X.Mao,W.Li,AphotoconductivesemiconductorswitchbasedonanindividualZnSnanobelt.ScriptaMaterialia,62,(2010),520-523(SCI源刊，影响因子2.887)
59、Y.Q.Chen,X.J.Zheng,S.X.Mao,W.Li,NanoscalemechanicalbehaviorofvanadiumdopedZnOpiezoelectricnanofiberbynanoindentationtechnique.J.Appl.Phys.,107,(2010),094302(1-5)(SCI源刊,影响因子2.497)
60、Y.Q.Chen,X.J.Zheng,X.Feng,S.H.Dai,D.Z.Zhang,Fabricationoflead-free(Na0.82K0.18)0.5Bi0.5TiO3piezoelectricnanofiberbyelectrospinning.MaterialsResearchBulletin,45,(2010),717-721(SCI源刊,影响因子1.812)
61、X.J.Zheng,Y.F.Rong,D.Z.Zhang,T.Zhang,L.He,X.Feng,Enhancementoneffectivepiezoelectriccoefficientd33ofBi3.15Dy0.85Ti3O12ferroelectricthinfilms.MaterialsLetters,64,(2010),618-621(SCI源刊,影响因子1.748)
62、J.S.Wang,X.J.Zheng,H.Zheng,Z.Zhu,S.T.Song,Evaluationofthesubstrateeffectonindentationbehavioroffilm/substratesystem.AppliedSurfaceScience,256,(2010),3316-3320(SCI源刊,影响因子1.576)
63、Z.Zhu,X.J.Zheng,W.Li,MultilayergrowthofBaTiO3thinfilmsviapulsedlaserdeposition:Anenergy-dependentkineticMonteCarlosimulation.AppliedSurfaceScience,256,(2010),5876-5881(SCI源刊,影响因子1.576)
64、X.J.Zheng,S.H.Dai,X.Feng,T.Zhang,D.Z.Zhang,Y.Q.Gong,Y.Q.Chen,L.He,Structuralandelectricalpropertiesof(Na0.85K0.15)0.5Bi0.5TiO3thinfilmsdepositedonLaNiO3andPtbottomelectrodes.AppliedSurfaceScience,256,(2010),3316-3320(SCI源刊,影响因子1.576)
65、Y.Q.Chen,X.J.Zheng,L.He,X.Feng,Annealingtemperature-dependentpiezoelectricpropertiesofBi3.15Nd0.85Ti3O12ferroelectricthinfilms.Phys.StatusSolidiA,207,(2010),1240-1244(SCI源刊，影响因子1.205)
66、Y.Q.Gong,X.J.Zheng,L.J.Gong,Y.Ma,D.Z.Zhang,S.H.Dai,X.J.Li,EffectsofannealingtemperatureonmicrostructureandferroelectricpropertiesofBi0.5(Na0.85K0.15)0.5TiO3thinfilms.Trans.NonferrousMet.Soc.China,20,(2010),1906-1910.(SCI源刊，影响因子0.321)
67、H.P.Hu,S.H.Dai,X.J.Zheng,Y.C.Zhou,X.Feng,D.Z.Zhang,L.He,ThermalandpiezoelectricpropertiesofBi3.15Nd0.85Ti3O12thinfilmpreparedbymetalorganicdecomposition.Trans.NonferrousMet.Soc.China,20,(2010),1424-1428.(SCI源刊，影响因子0.321)
68、X.J.Zheng,B.Yang,T.Zhang,C.B.Jiang,S.X.Mao,Y.Q.Chen,B.Yuan,EnhancementinultravioletoptoelectronicperformanceofphotoconductivesemiconductorswitchbasedonZnOnanobelts.Appl.Phys.Lett.,95,(2009),221106(1-3)(SCI源刊，影响因子4.308)
69、Z.Zhu,X.J.Zheng,W.Li,SubmonolayergrowthofBaTiO3thinfilmviapulsedlaserdeposition:AkineticMonteCarlosimulation.J.Appl.Phys.,106,(2009),054105.(SCI源刊,影响因子2.497)
70、Y.Q.Chen,X.J.Zheng,X.Feng,D.Z.Zhang,S.H.Dai,Lead-freepiezoelectric(Na0.5Bi0.5)0.94TiO3–Ba0.06TiO3nanofiberbyelectrospinning.Phys.StatusSolidiRRL.,3,(2009),290-292(SCI源刊，影响因子2.147)
71、X.J.Zheng,W.Yin,T.Zhang,Y.Q.Chen,M.H.Tang,J.Sun,Effectoftheabnormalelectricfieldinducedbythepassivelayeronimprintfailuresofferroelectriccapacitors.Phys.StatusSolidiRRL.,3,(2009),251-253(SCI源刊，影响因子2.147)
72、B.Wu,X.J.Zheng,H.P.Hu,D.H.Li,Y.Ma,Y.C.Zhou,Neartipstressintensityfactorforanedge-crackinaPb(ZrxTi1-x)O3thin?lmwith90°domainswitchingunderacontinuouslaserirradiation.EngineeringFractureMechanics,76,(2009),1811-1821(SCI源刊，影响因子1.713)
73、D.H.Li,X.J.Zheng,B.Wu,Y.C.Zhou,Fractureanalysisofasurfacethrough-thicknesscrackinPZTthinfilmunderacontinuouslaserirradiation.EngineeringFractureMechanics,76,(2009),525-532(SCI源刊，影响因子1.713)
74、J.J.Zhang,J.Sun,X.J.Zheng,AmodelfortheC-Vcharacteristicsofthemetal–ferroelectric–insulator–semiconductorstructure.Solid-StateElectronics,53,(2009),170-175(SCI源刊，影响因子1.259)
75、R.Wang,Y.He,T.Zhang,Z.Wang,X.J.Zheng,L.Niu,DCandACanalysisofhumiditysensitivepropertiesbasedonK+dopednanocrystallineLaCo0.3Fe0.7O3.SensorsandActuatorsB:Chemical.136,(2009),536-540(SCI源刊，影响因子3.122)
76、Q.Qi,T.Zhang,L.Liu,X.J.Zheng,SynthesisandtoluenesensingpropertiesofSnO2nano?bers.SensorsandActuatorsB:Chemical.137,(2009),471-475(SCI源刊，影响因子3.122)
77、Q.Qi,T.Zhang,S.Wang,X.J.Zheng,HumiditysensingpropertiesofKCl-dopedZnOnanofiberswithsuper-rapidresponseandrecovery.SensorsandActuatorsB:Chemical.137,(2009),649-655(SCI源刊，影响因子3.122)
78、Q.Qi,T.Zhang,X.J.Zheng,L.Wan.PreparationandhumiditysensingpropertiesofFe-dopedmesoporoussilicaSBA-15.SensorsandActuatorsB:Chemical.135,(2008),255-261(SCI源刊，影响因子3.122)
79、Q.Qi,T.Zhang,L.Liu,X.J.Zheng,,Q.Yu,Y.Zeng,etal.Selectiveacetonesensorbasedondumbbell-likeZnOwithrapidresponseandrecovery.SensorsandActuatorsB:Chemical.134,(2008),166-170(SCI源刊，影响因子3.122)
80、Q.Qi,T.Zhang,X.J.Zheng,H.Fan,L.Liu,R.Wang,etal.ElectricalresponseofSm2O3-dopedSnO2toC2H2andeffectofhumidityinterference.SensorsandActuatorsB:Chemical.134,(2008),36-42(SCI源刊，影响因子3.122)
81、X.J.Zheng,J.Sun,J.J.Zhang,M.H.Tang,W.Li,Evaluationofcapacitance-voltagecharacteristicandmemorywindowofmetal-ferroelectric-insulator-siliconcapacitors.Appl.Phys.Lett.,93,(2008),213501(1-3)(SCI源刊，影响因子4.308)
82、Z.Zhu,X.J.Zheng,W.Li,KineticMonteCarlosimulationofRHEEDfromBaTiO3thinfilms.PhysicaB,403,(2008),4074-4078(SCI源刊，影响因子0.908)
83、F.Yang,M.H.Tang,Y.C.Zhou,F.Liu,Y.Ma,X.J.Zhengetal.Fatiguemechanismoftheferroelectricperovskitethinfilms.Appl.Phys.Lett.92(2)(2008),022908(1-3).(SCI源刊，影响因子4.127)
84、L.P.Tang,S.H.Xie,X.J.Zheng,etal.DomainswitchinginferroelectricceramicsbeyondTaylorbound.MechanicsofMaterials40(2008),362-376.(SCI源刊，影响因子2.106)
85、X.J.Zheng,L.He,M.H.Tang,Y.Ma,J.B.Wang,Q.M.Wang.EnhancementoffatigueenduranceandretentioncharacteristicinBi3.25Eu0.75Ti3O12thinfilm.MaterialsLetters62(2008),2876-2879.(SCI源刊，影响因子1.353)
86、X.J.ZhengY.G.Lu,L.He,Y.Q.Gong.NanoscaledomainswitchinginBi3.15Eu0.85Ti3O12thinfilmsannealedatdifferenttemperaturebyscanningprobemicroscopy.MaterialsLetters62(2008),440-442(SCI源刊，影响因子1.353)
87、Z.Ye,M.H.Tang,Y.C.Zhou,X.J.ZhengModelingofimprintinhysteresisloopofferroelectricthinfilmswithtopandbottominterfacelayers.Appl.Phys.Letts,90(2007),042902(1-3)(SCI源刊，影响因子4.127)
88、F.Yang,M.H.Tang,Y.C.Zhou,X.J.Zheng,F.Liu,J.X.Tang,J.J.Zhang,J.Zhang,andChangQ.SunAmodelforthepolarizationhysteresisloopsoftheperovskite-typeferroelectricthinfilms.Appl.Phys.Letts,91(2007),142902(SCI源刊，影响因子4.127)
89、Z.Ye,M.H.Tang,Y.C.Zhou,X.J.ZhengElectricalpropertiesofV-dopedBi3.15Nd0.85Ti3O12thinfilmswithdifferentcontents.Appl.Phys.Letts,90(2007),082905(1-3)(SCI源刊，影响因子4.127)
90、J.Zhang,M.H.Tang,J.X.Tang,F.Yang,H.Y.Xu,W.F.Zhao,X.J.Zheng,Y.C.Zhou,andJ.HeBilayermodelofpolarizationoffsetofcompositionallygradedferroelectricthinfilms.Appl.Phys.Letts,91(2007),162908(1-3)(SCI源刊，影响因子4.127)
91、X.L.Zhong,J.B.Wang,L.Z.Sun,C.B.Tan,X.J.Zheng,andY.C.ZhouImprovedferroelectricpropertiesofbismuthtitanatefilmsbyNdandMncosubstitution.Appl.Phys.Lett.,90(1),(2007),012906(1-3)(SCI源刊，影响因子4.127)
92、F.Yang,M.H.Tang,Z.Ye,Y.C.Zhou,X.J.Zheng,J.X.Tang,J.J.ZhangandJ.HeEightlogicstatesoftunnelingmagneto-electroresistanceinmultiferroictunneljunctions.JournalofAppliedPhysics,102(2007),044504(1-5)(SCI源刊,影响因子2.497)
93、X.J.Zheng,etal.TheEffectsofannealingtemperatureonthepropertiesofBi3.15Nd0.85Ti3O12thinfilms.ScriptaMaterialia57(2007)675-678(SCI源刊，影响因子2.112)
94、M.H.Tang,Y.C.Zhou,X.J.Zheng.ElectricalPropertiesofMetal-Ferroelectric-Insulator-SemiconductorCapacitorsusingPt/(Bi3.15Nd0.85)(Ti3-xVx)O12/Y2O3/SiStructure.IntegratedFerroelectrics,94(2007),105-114(SCI源刊，影响因子0.427)
95、M.H.Tang,Y.C.Zhou,X.J.Zheng.Structuralandelectricalpropertiesofmetal-ferroelectric-insulator-semiconductortransistorsusingaPt/Bi3.25Nd0.75Ti3O12/Y2O3/Sistructure.SolidStateElectronics,51(2007),371-375(SCI源刊，影响因子1.210)
96、C.P.Cheng,M.H.Tang,Z.Ye,X.L.Zhong,X.J.Zheng,Y.C.Zhou,Z.S.HuStructureevolutionandferroelectricpropertiesofBi3.4Yb0.6Ti3O12thinfilmscrystallizedunderamoderatetemperature.MaterialsLetters,61(2007),3563(SCI源刊，影响因子1.353)
97、C.P.Cheng,M.H.Tang,Z.Ye,Y.C.Zhou,X.J.ZhengMicrostructureandferroelectricpropertiesofdyprosia-dopedbismuthtitanatethinfilms.MaterialsLetters,61(2007),4117-4120(SCI源刊，影响因子1.353)
98、X.J.Zheng,J.J.Zhang,Y.C.Zhou,Y.Q.Chen,Y.BoSimulationofelectricpropertiesofMFIScapacitorwithBNTferroelectricthinfilmusingSilvaco/Atlas.Trans.NonferrousMet.Soc.China17(s1),(2007),752-755(SCI源刊，影响因子0.277)
99、X.J.Zheng,B.Yang,Z.Zhu,B.Wu,Y.L.MaoKineticMonteCarloSimulationoftheGrowthofBaTiO3ThinFilmviaPulsedLaserDeposition.Trans.NonferrousMet.Soc.China17(6),(2007),1441-1446(SCI源刊，影响因子0.277)
100、X.J.Zheng,J.Lu,Y.C.Zhou,B.Wu,Y.Q.Chen.EvolutionofthedomainstructureandthefrequencyeffectontheferroelectricpropertiesinBITferroelectrics.Trans.NonferrousMet.Soc.China17(s1),(2007),64-68(SCI源刊，影响因子0.277)
101、X.J.Zheng,L.P.Tang,Q.Y.Wu,B.Wu.EvaluationoftheeffectiveelasticconstantsforpolycrystallinePZTthinfilmsbyXRDpatternsandpolefigures.JournalofCentralSouthUniversityofTechnology.14(s1),(2007),130-134(SCI源刊，影响因子0.277)
102、J.X.Tang,M.H.Tang,F.Yang,J.J.Zhang,Y.C.Zhou,andX.J.ZhengAtemperature-dependentmodelforkinkeffectofpartiallydepletedSOIMOSFETs.JournalofFunctionalMaterials,38(2007),872-877
103、X.J.Zheng,L.He,Y.C.Zhou,M.H.Tang.EffectsofeuropiumcontentonthemicrostructuralandferroelectricpropertiesofBi(4?x)EuxTi3O12thinfilms.Appl.Phys.Lett.(2006),89:252908(1-3)(SCI源刊，影响因子4.127)
104、Z.Ye,M.H.Tang,C.P.Cheng,Y.C.Zhou,X.J.Zheng,Z.S.Hu.Simulationofpolarizationandbutterflyhysteresisloopsinbismuthlayer-structuredferroelectricthinfilms.J.Appl.Phys.100(2006),094-101.(SCI源刊,影响因子2.497)
105、M.H.Tang,Y.C.Zhou,X.J.Zheng,Z.Yan,C.P.Cheng,Z.Ye,Z.S.Hu.Characterizationofultra-thinY2O3filmsasinsulatorofMFISFETstructure.Trans.NonferrousMet.SOC.China16(2006),63-66.(SCI源刊，影响因子0.277)
106、C.P.Cheng,M.H.Tang,Z.Ye,Y.C.Zhou,X.J.Zheng.Ferroelectricpropertiesofdysprosium-dopedBi4Ti3O12thinfilmscrystallizedinvariousatmospheres.Trans.NonferrousMet.SOC.China16(2006),33-36.(SCI源刊，影响因子0.277)
107、Z.Ye,M.H.Tang,C.P.Cheng,Y.C.Zhou,X.J.Zheng,Z.S.Hu.Effectofannealingtemperatureonferroelectricpropertiesof(Bi,Nd)4(Ti,V)3O12thinfilms.Trans.NonferrousMet.SOC.China16(2006),71-74.(SCI源刊，影响因子0.277)
108、X.Tan,Y.C.ZhouandX.J.Zheng.Pulsed-laserdepositionofpolycrystallineNifilms:athree-dimensionalkineticMonteCarlosimulation,SurfaceSci.,588(1-3)(2005),175-183(SCI源刊，影响因子2.168)
109、X.J.ZhengandY.C.Zhou,Investigationofananisotropicplatemodeltoevaluatetheinterfaceadhesionofthinfilmwithcross-sectionalnanoindentationmethod,CompositesSci.Tech.,(2005),1382-1390(SCI源刊，影响因子1.783)
110、X.L.Zhong,J.B.Wang,Y.C.Zhou,J.J.Liu,X.J.Zheng,ElectricalpropertiesofNd-substratedBi4Ti3O12thinfilmsfabricatedbychemicalsolutiondeposition,J.CrystalGrowth,277(1-4),(2005),233-237(SCI源刊，影响因子1.707)
111、X.Tan,X.J.ZhengandY.C.Zhou,Dependenceofmorphologyofpulsed-laserdepositedcoatingsontemperature:akineticMonteCarlosimulation,SurfaceandCoatingTechnology,197(2-3),(2005),288-293(SCI源刊，影响因子1.432)
112、X.Tan,Y.C.Zhou,andX.J.Zheng,Comparisonofislandformationbetweenpulsedlaserdepositionandmolecularbeamepitaxy,Surfacereviewandletters,12(2005),611-617(SCI源刊，影响因子0.675)
113、X.J.Zheng,J.Y.LiandY.C.Zhou.X-raydiffractionmeasurementofresidualstressinPZTthinfilmspreparedbypulsedlaserdeposition.ActaMater.,52,(2004),3313-3322.SCI影响因子3.059
114、X.J.Zheng,S.F.Deng,Y.C.Zhou,X.Tan.PlatemodeltoevaluateinterfacialadhesionofanisotropythinfilminCSNtest.JournalofMaterialsScience.2004，39(12),4013-4016.SCI影响因子0.826
115、X.L.Zhong,X.J.Zheng,J.T.Yang.DependenceofBa(Zr0.1Ti0.9)O3filmsgrowthonsubstratetemperatureuponradio-frequencyplasmaenhancedpulsedlaserdeposition,JournalofCrystalGrowth,271(1-2)(2004),216-222(SCI源刊，影响因子1.707)
116、X.L.Zhong,J.B.Wang,X.J.Zheng,Y.C.Zhou.StructureandferroelectricanddielectricpropertiesofBi3.5Nd0.5Ti3O12thinfilmsunderamoderatetemperatureannealing,Appl.Phys.Lett.,85(23)(2004),5661-5663(SCI源刊，影响因子4.127)
117、S.F.Deng,X.J.Zheng,J.T.Yang.X-rayDiffractionMeasurementofResidualStressinPZTThinFilmsPreparedbyMODwiththeNewExtendedModel.JournalofMaterialsScienceandTechnology,52.11(2004),3313-3322(SCI源刊，影响因子0.329)
118、X.J.Zheng,Y.C.ZhouandJ.Y.Li.Nano-indentationfracturetestofPb(Zr0.52Ti0.48)O3ferroelectricthinfilms.ActaMater.,51,(2003),3985-3997.SCI影响因子3.059
119、X.J.Zheng,Y.C.Zhou,H.Zhong.DependenceoffracturetoughnessonannealingtemperatureinPZTthinfilmsproducedbymetalorganicdecomposition.JournalofMaterialsResearch,18(3),(2003),578-584.SCI影响因子1.635
120、X.J.Zheng,Z.Y.YangandY.C.Zhou.ResidualstressesinPb(Zr0.52Ti0.48)O3thinfilmsdepositedbymetalorganicdecomposition.ScriptaMaterialia,49(1),(2003)，71-76.SCI影响因子1.633
121、X.J.Zheng,Y.C.Zhou,J.M.LiuandA.D.Li.Useofthenanomechanicalfracture-testingfordetermininginterfacialadhesionofPZTferroelectricsthinfilms.SurfaceandCoatingTechnology,176,(2003),67-74.SCI影响因子1.410
122、X.J.Zheng,Y.C.Zhou,J.M.LiuandA.D.Li.DeterminationofinterfacialfractureenergyofPZTferroelectricthinfilmsbynano-scratchtechnique.JournalofMaterialsScienceLetters,22(10),(2003)，743-745.SCI影响因子0.470
123、X.J.Zheng,Y.C.Zhou，Z.Yan.DependenceofCrystalline,FerroelectricandFractureToughnessonAnnealinginPb(Zr0.52Ti0.48)O3ThinFilmsDepositedbyMetalOrganicDecomposition.MaterialsResearch,6(4),(2003)，551-556.
124、Y.C.Zhou,Z.Y.Yang,X.J.Zheng.ResidualstressinPZTthinfilmspreparedbypulsedlaserdeposition.SurfaceandCoatingTech.,162(2-3),(2003)，202-211.SCI影响因子1.410
125、X.J.Zheng,Y.C.Zhou,M.Z.Nin.ThermopiezoelectricresponseofapiezoelectricthinfilmPZT-6BdepositedonMgO(100)substrateduetoacontinuouslaser.Int.J.SolidStructure,39(15),(2002),3935-3957.SCI影响因子1.327
126、X.J.Zheng,Y.C.Zhou,J.M.LiuandA.D.Li.InterfacialadhesionanalysisofPb(Zr0.52Ti0.48)O3ferroelectricsthinfilmsbynano-indentationtest.PhysLettA,304(3-4),(2002)，110-113.SCI影响因子1.324
127、Z.Y.Yang,Y.C.Zhou,X.J.Zheng,Z.YanandG.Bignall.ThedeterminationofresidualstressinPZTthinfilmpreparedbypulsedlaserdeposition.JournalofMaterialsScienceLetters,21(19),(2002)，1541-1544.SCI影响因子0.470
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