樊庆扬 - 西安建筑科技大学 - 信息与控制工程学院

个人简介

教育背景：2012.9---2017.12西安电子科技大学微电子学与固体电子学博士（硕博连读）

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

[1]. QingyangFan,*WenzhuZhang,SiningYun,*JieXu,andYanxingSong,III-Nitride Polymorphs:XN(X=Al,Ga,In)inthePnmaPhase,Chemistry-AEuropeanJournal,2018, 24,17280–17287 [2]. QingyangFan,*RuiNiu,WenzhuZhang,WeiZhang,YingchunDing,andSiningYun*,t- Si64:ANovelSiliconAllotrope,ChemPhysChem2019,20,128–133201905-201906, 201907-201908连续两次入选ESI高被引论文 [3]. QingyangFan*,JieXu,WenzhuZhang,YanxingSong,andSiningYun*,Physical propertiesofgroup14semiconductoralloysinorthorhombicphase,JournalofApplied Physics,2019,126,045709. [4]. Qing-YangFan⁎,Run-LingYang,WeiZhang,Si-NingYun⁎,Elasticanisotropyand thermalconductivityofsiliconallotropes,ResultsinPhysics,2019,15,102580. [5]. QingyangFan⁎,HuiqinWang,WenzhuZhang,MingfeiWei,YanxingSong,WeiZhang, SiningYun⁎,Si–GealloysinC2/cphasewithtunabledirectbandgaps:Acomprehensive study,CurrentAppliedPhysics2019,19,1325–1333. [6]. QingyangFan,ZhongxingDuan,YanxingSong,WeiZhang,QidongZhang,SiningYun, Electronic,MechanicalandElasticAnisotropyPropertiesofX-Diamondyne(X=Si,Ge), Materials2019,12,3589 [7]. QingyangFan*,ChangchunChai,etal.,TheoreticalInvestigationsofGroupIVAlloysin theLonsdaleitePhase.JournalofMaterialsScience,2018,53,2785–2801. [8]. QingyangFan*,ChangchunChai,etal.,TwonovelGephasesandtheirSi-Gealloys withexcellentlyelectronicandopticalproperties,Materials&Design,2017,132,539– 551. [9]. QingyangFan,ChangchunChai,QunWei,etal.,Twonovelsiliconphaseswithdirect bandgaps,PhysicalChemistryChemicalPhysics,2016,18,12905-12913. [10]. QingyangFan,ChangchunChai,etal.,Novelsiliconallotropes:Stability,mechanical, andelectronicproperties,JournalofAppliedPhysics,2015,118,185704. [11]. QingyangFan*,ChangchunChai,etal.,TwoNovelC3N4Phases:Structural, MechanicalandElectronicProperties,Materials,2016,9,427. [12]. QingyangFan*,ChangchunChai,etal.,Themechanicalandelectronicpropertiesof carbon-richsiliconcarbide,Materials,2016,9,333. [13]. QingyangFan*,ChangchunChai,etal.,Si96:Anewsiliconallotropewithinteresting physicalproperties,Materials,2016,9,284. [14]. QingyangFan,QunWei,etal.,ElasticandelectronicpropertiesofPbca-BN:First- principlescalculations,ComputationalMaterialsScience,2014,85,80-87. [15]. QingyangFan,QunWei,ChangchunChai,etal.,Elasticandelectronicpropertiesof Imm2-andI-4m2-BCN,ComputationalMaterialsScience,2015,97,6-13. [16]. QingyangFan,QunWei,ChangchunChai,etal.,Structural,mechanical,andelectronic propertiesofP3m1-BCN,JournalofPhysicsandChemistryofSolids,2015,79,89-96. [17]. QingyangFan*,ChangchunChai,etal.,MechanicalandelectronicpropertiesofSi,Ge andtheiralloysinP42/mnmstructure,MaterialsScienceinSemiconductorProcessing, 2016,43,187–195. [18]. QingyangFan,ChangchunChai,QunWei,etal.,Mechanicalandelectronicpropertiesof Ca1-xMgxOalloys.MaterialsScienceinSemiconductorProcessing,2015,40,676-684. [19]. QingyangFan,ChangchunChai,etal.,Elasticanisotropyandelectronicpropertiesof Si3N4underpressures.AIPAdvances,2016,6(8),文献号:085207 [20]. QingyangFan,ChangchunChai,etal.,PredictionofnovelphaseofsiliconandSi–Ge alloys,JournalofSolidStateChemistry,2016,233,471–483.(SCI:000369881200064， ESI高被引论文) [21]. QingyangFan*,ChangchunChai,etal.,AnewphaseofGaN,JournalofChemistry, 2016,8612892. [22]. QingyangFan,QunWei,ChangchunChai,etal.,Anewpotentialsuperhardphaseof OsN2,ActaPhysicaPolonicaA,2014,126,740-746. [23]. QingyangFan,QunWei,ChangchunChai,etal.,Structural,anisotropicand thermodynamicpropertiesofboroncarbide:Firstprinciplescalculations,IndianJournal ofPure&AppliedPhysics,2016,54,227-235. [24]. QingyangFan,QunWei,ChangchunChai,etal.,Theelasticanisotropicand thermodynamicpropertiesofI4mm-B3C,ActaPhysicaPolonicaA,2016,129,103-108. [25]. QingyangFan,QunWei,ChangchunChai,etal.,First-principlesstudyofstructural, elastic,anisotropic,andthermodynamicpropertiesofR3-B2C,ChineseJournalof Physics,2015,53,100601. [26]. QingyangFan*,ChangchunChai,etal.,Thermodynamic,elastic,elasticanisotropyand minimumthermalconductivityofβ-GaNunderhightemperature.ChineseJournalof Physics,2017,55(2),400-411. [27]. QiankunWang,ChangchunChai,QingyangFan*,etal.,PhysicalPropertiesofC-Si AlloysinC2/mStructure.CommunicationsinTheoreticalPhysics,2017,68(2),259-268. (通讯作者) [28]. YanxingSong,ChangchunChai,QingyangFan*,WeiZhang,andYintangYang,Physical propertiesofSi–GealloysinC2/mphase:acomprehensiveinvestigation,Journalof Physics:CondensedMatter,2019,31,255703.(通讯作者) [29]. WeiZhang,ChangchunChai,QingyangFan*,etal.TheoreticalinvestigationsofGe1- xSnxalloys(x=0,0.333,0.667,1)inP42/ncmphase.JournalofMaterialsScience, 2018,53,9611–9626.(通讯作者) [30]. ChaigangBai,ChangchunChai,QingyangFan*,etal.,Anovelsiliconallotropein monoclinicphase.Materials,2017,10,441.(通讯作者) [31]. ChenxiHan,ChangchunChai,QingyangFan*,JionghaoYang,YintangYang,Structural, Electronic,andThermodynamicPropertiesofTetragonalt-SixGe3-xN4,Materials,2018, 11,397.(通讯作者) [32]. WeiZhang,ChangchunChai,YanxingSong,QingyangFan*,YintangYang,Structural, Mechanical,Anisotropic,andThermalPropertiesofAlAsinoC12andhP6Phasesunder Pressure.Materials,2018,11,740.(通讯作者) [33]. XiangyangXu,ChangchunChai,QingyangFan*,etal.,TheoreticalpredictionofnewC– SialloysinC2/m-20structure.ChinesePhysicsB,2017,26(4),046101.(通讯作者) [34]. Ying-BoZhao,WeiZhang,Qing-YangFan*,PhysicalPropertiesofGroup14inP6222 Phase:First-PrinciplesCalculations,Commun.Theor.Phys.71(2019)1036–1046(通讯作者) [35]. WeiZhang,ChangchunChai,QingyangFan*,YanxingSong,YintangYang,Twonovel superhardcarbonallotropeswithhoneycombstructures,J.Appl.Phys.126,145704 (2019)(通讯作者) [36]. WeiZhang,ChangchunChai,QingyangFan*,YanxingSong,YintangYang,PBCF- graphene:A2Dsp2hybridizedhoneycombcarbonallotropewithadirectbandgap, ChemNanoMat,10.1002/cnma.201900645(通讯作者)