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Silicon single-photon avalanche diodes with nano-structured light trapping.
Nature Communications ( IF 14.7 ) Pub Date : 2017-09-20 , DOI: 10.1038/s41467-017-00733-y
Kai Zang , Xiao Jiang , Yijie Huo , Xun Ding , Matthew Morea , Xiaochi Chen , Ching-Ying Lu , Jian Ma , Ming Zhou , Zhenyang Xia , Zongfu Yu , Theodore I. Kamins , Qiang Zhang , James S. Harris

Silicon single-photon avalanche detectors are becoming increasingly significant in research and in practical applications due to their high signal-to-noise ratio, complementary metal oxide semiconductor compatibility, room temperature operation, and cost-effectiveness. However, there is a trade-off in current silicon single-photon avalanche detectors, especially in the near infrared regime. Thick-junction devices have decent photon detection efficiency but poor timing jitter, while thin-junction devices have good timing jitter but poor efficiency. Here, we demonstrate a light-trapping, thin-junction Si single-photon avalanche diode that breaks this trade-off, by diffracting the incident photons into the horizontal waveguide mode, thus significantly increasing the absorption length. The photon detection efficiency has a 2.5-fold improvement in the near infrared regime, while the timing jitter remains 25 ps. The result provides a practical and complementary metal oxide semiconductor compatible method to improve the performance of single-photon avalanche detectors, image sensor arrays, and silicon photomultipliers over a broad spectral range.The performance of silicon single-photon avalanche detectors is currently limited by the trade-off between photon detection efficiency and timing jitter. Here, the authors demonstrate how a CMOS-compatible, nanostructured, thin junction structure can make use of tailored light trapping to break this trade-off.

中文翻译:

具有纳米结构光陷阱的硅单光子雪崩二极管。

硅单光子雪崩探测器由于其高信噪比,互补金属氧化物半导体兼容性,室温操作和成本效益,在研究和实际应用中变得越来越重要。但是,当前的硅单光子雪崩检测器需要权衡取舍,尤其是在近红外范围内。厚结器件具有良好的光子检测效率,但时序抖动较弱;而薄结器件具有良好的时序抖动,但效率较差。在这里,我们演示了一种捕光,薄结Si单光子雪崩二极管,它通过将入射光子衍射到水平波导模式来打破这种折衷,从而显着增加了吸收长度。光子检测效率为2。近红外范围提高了5倍,而定时抖动仍保持25 ps。结果提供了一种实用且互补的金属氧化物半导体兼容方法,可在较宽的光谱范围内提高单光子雪崩探测器,图像传感器阵列和硅光电倍增管的性能。在光子检测效率和定时抖动之间进行权衡。在这里,作者演示了CMOS兼容的纳米结构的薄结结构如何利用量身定制的光阱来打破这种折衷。图像传感器阵列和宽光谱范围内的硅光电倍增管。目前,硅单光子雪崩检测器的性能受到光子检测效率与定时抖动之间的权衡限制。在这里,作者演示了CMOS兼容的纳米结构的薄结结构如何利用量身定制的光阱来打破这种折衷。图像传感器阵列和宽光谱范围内的硅光电倍增管。目前,硅单光子雪崩检测器的性能受到光子检测效率与定时抖动之间的权衡限制。在这里,作者演示了CMOS兼容的纳米结构的薄结结构如何利用量身定制的光阱来打破这种折衷。
更新日期:2017-09-20
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