Transparent, conducting p-La1−xSrxCrO3 epitaxial layers were deposited on Nb-doped SrTiO3(001) by oxygen-assisted molecular beam epitaxy to form structurally coherent p-n junctions. X-ray photoelectron spectroscopy reveals a type II or “staggered” band alignment, with valence and conduction band offsets of 2.0 eV and 0.9 eV, respectively. Diodes fabricated from these heterojunctions exhibit rectifying behavior, and the I-V characteristics are different from those for traditional semiconductor p-n junctions. A rather large ideality factor is ascribed to the complex nature of the interface.

中文翻译：

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基于透明导电 p-La1−xSrxCrO3 外延层的全钙钛矿 pn 结

通过氧辅助分子束外延将透明、导电的 p-La1-xSrxCrO3 外延层沉积在 Nb 掺杂的 SrTiO3(001) 上，形成结构相干的 pn 结。X 射线光电子能谱揭示了 II 型或“交错”带排列，价带和导带偏移分别为 2.0 eV 和 0.9 eV。由这些异质结制成的二极管表现出整流行为，并且 IV 特性不同于传统半导体 pn 结的特性。一个相当大的理想因子归因于界面的复杂性。